Semiconductor memory cell array and semiconductor memory device having the same

ABSTRACT

A semiconductor memory cell array includes a plurality of bit-lines, a plurality of word-lines, a plurality of memory cells, a plurality of dummy memory cells, a plurality of dummy bit-lines, and a plurality of dummy word-lines. The dummy bit-lines are in outer regions of the bit-lines. The dummy word-lines are in outer regions of the word-lines. The dummy bit-lines are maintained in a floating state. The dummy word-lines retain a turn-off voltage

CROSS REFERENCE TO RELATED APPLICATION

This is a continuation application based on pending application Ser. No.12/656,984, filed Feb. 22, 2010, the entire contents of which is herebyincorporated by reference.

BACKGROUND

1. Technical Field

Example embodiments relate to a semiconductor device and, moreparticularly, to a semiconductor memory cell array and a semiconductormemory device having the same.

2. Description of the Related Art

Generally, a semiconductor memory cell array includes a plurality ofmemory cells, a plurality of word-lines, and a plurality of bit-lines.Memory cells arranged in edge regions of the semiconductor memory cellarray are used as dummy memory cells because the memory cells arrangedin edge regions of the semiconductor memory cell array might not achievecharacteristics required for normal operations. The dummy memory cellsare coupled to a plurality of dummy word-lines and a plurality of dummybit-lines.

As demand for higher integration degree and lower power consumption ofthe semiconductor memory device increases, noise caused by the dummyword-lines, the dummy bit-lines, and/or the dummy memory cells maynegatively influence operation of actual memory cells in thesemiconductor memory device.

SUMMARY

Embodiments are therefore directed to semiconductor memory cell arrayand device, which substantially overcome one or more of the problems dueto the limitations and disadvantages of the related art.

It is therefore a feature of an embodiment to provide a semiconductormemory cell array capable of reducing noise caused by dummy word-lines,dummy bit-lines, and/or dummy memory cells when a semiconductor memorydevice operates using a low operation voltage.

It is therefore another feature of an embodiment to provide asemiconductor memory device having the semiconductor memory cell array.

At least one of the above and other features and advantages may berealized according to some example embodiments by providing asemiconductor memory cell array may include a plurality of bit-lines, aplurality of word-lines, a plurality of memory cells, a plurality ofdummy memory cells, a plurality of dummy bit-lines, and a plurality ofdummy word-lines. The memory cells may be arranged in regionscorresponding to intersecting points of the bit-lines and theword-lines. The dummy memory cells may be arranged in edge regions ofthe semiconductor memory cell array. The dummy bit-lines may bemaintained in a floating state. The dummy bit-lines may be formed inouter regions of the bit-lines. The dummy word-lines may receive aturn-off voltage. The dummy word-lines may be formed in outer regions ofa plurality of word-lines.

In some embodiments, the dummy memory cells coupled to the dummybit-lines may be maintained in the floating state.

In some embodiments, wherein the dummy memory cells coupled to the dummyword-lines may be maintained in a turn-off state.

In some embodiments, the dummy memory cells may include a plurality ofsub-dummy memory cells that are arranged in regions corresponding tointersecting points of the bit-lines and the dummy word-lines. Ajunction floating may be conducted between the sub-dummy memory cellsand the bit-lines.

In some embodiments, the semiconductor memory cell array may be adynamic random access memory (DRAM) memory cell array.

In some embodiments, the semiconductor memory cell array may beimplemented as one of an open bit-line structure and a folded bit-linestructure.

According to some example embodiments, a semiconductor memory cell arraymay include a plurality of bit-lines, a plurality of word-lines, aplurality of memory cells, a plurality of dummy memory cells, aplurality of first dummy bit-lines, a plurality of second dummybit-lines, and a plurality of dummy word-lines. The memory cells may bearranged in regions corresponding to intersecting points of thebit-lines and the word-lines. The dummy memory cells may be arranged inedge regions of the semiconductor memory cell array. The first dummybit-lines may receive an internal voltage. The first dummy bit-lines maybe formed in outer regions of the bit-lines. The second dummy bit-linesmay be maintained in a floating state. The second dummy bit-lines may beformed in outer regions of the first dummy bit-lines. The dummyword-lines may receive a turn-off voltage. The dummy word-lines may beformed in outer regions of the word-lines.

In some embodiments, the dummy memory cells coupled to the second dummybit-lines may be maintained in the floating state.

In some embodiments, the dummy memory cells coupled to the dummyword-lines may be maintained in a turn-off state.

In some embodiments, the dummy memory cells may include a plurality ofsub-dummy memory cells that are arranged in regions corresponding tointersecting points of the bit-lines and the dummy word-lines. Ajunction floating may be conducted between the sub-dummy memory cellsand the bit-lines.

In some embodiments, the first dummy bit-lines may be dummy bit-linesthat are adjacent to the bit-lines.

In some embodiments, the second dummy bit-lines may be dummy bit-linesthat are away farthest from the bit-lines.

In some embodiments, the semiconductor memory cell array may be a DRAMmemory cell array.

In some embodiments, the semiconductor memory cell array may beimplemented as one of an open bit-line structure and a folded bit-linestructure.

According to some example embodiments, a semiconductor memory device mayinclude a semiconductor memory cell array, a row decoder, a columndecoder, a sense amplifier, and a data input driver. The row decoder maydetermine a word-line for selecting a memory cell. The column decodermay determine a bit-line for selecting a memory cell. The senseamplifier may read data from a memory cell selected by the row decoderand the column decoder. The data input driver may write data into amemory cell selected by the row decoder and the column decoder. Thesemiconductor memory cell array may include a plurality of bit-lines, aplurality of word-lines, a plurality of memory cells, a plurality ofdummy memory cells, a plurality of dummy bit-lines, and a plurality ofdummy word-lines. The memory cells may be arranged in regionscorresponding to intersecting points of the bit-lines and theword-lines. The dummy memory cells may be arranged in edge regions ofthe semiconductor memory cell array. The dummy bit-lines may bemaintained in a floating state. The dummy bit-lines may be formed inouter regions of the bit-lines. The dummy word-lines may receive aturn-off voltage. The dummy word-lines may be formed in outer regions ofthe word-lines.

In some embodiments, the dummy memory cells coupled to the dummybit-lines may be maintained in the floating state. The dummy memorycells coupled to the dummy word-lines may be maintained in a turn-offstate.

In some embodiments, the dummy memory cells may include a plurality ofsub-dummy memory cells that are arranged in regions corresponding tointersecting points of the bit-lines and the dummy word-lines. Ajunction floating may be conducted between the sub-dummy memory cellsand the bit-lines.

In some embodiments, the semiconductor memory device may be a DRAMdevice.

In some embodiments, the semiconductor memory cell array may beimplemented as one of an open bit-line structure and a folded bit-linestructure.

According to some example embodiments, a semiconductor memory device mayinclude a semiconductor memory cell array, a row decoder, a columndecoder, a sense amplifier, and a data input driver. The row decoder maydetermine a word-line for selecting a memory cell. The column decodermay determine a bit-line for selecting a memory cell. The senseamplifier may read data from a memory cell selected by the row decoderand the column decoder. The data input driver may write data into amemory cell selected by the row decoder and the column decoder. Thesemiconductor memory cell array may include a plurality of bit-lines, aplurality of word-lines, a plurality of memory cells, a plurality ofdummy memory cells, a plurality of first dummy bit-lines, a plurality ofsecond dummy bit-lines, and a plurality of dummy word-lines. The memorycells may be arranged in regions corresponding to intersecting points ofthe bit-lines and the word-lines. The dummy memory cells may be arrangedin edge regions of the semiconductor memory cell array. The first dummybit-lines may receive an internal voltage. The first dummy bit-lines maybe formed in outer regions of the bit-lines. The second dummy bit-linesmay be maintained in a floating state. The second dummy bit-lines may beformed in outer regions of the first dummy bit-lines. The dummyword-line may receive a turn-off voltage. The dummy word-lines may beformed in outer regions of the word-lines.

In some embodiments, the dummy memory cells coupled to the second dummybit-lines may be maintained in the floating state. The dummy memorycells coupled to the dummy word-lines may be maintained in a turn-offstate.

In some embodiments, the dummy memory cells may include a plurality ofsub-dummy memory cells that are arranged in regions corresponding tointersecting points of the bit-lines and the dummy word-lines. Ajunction floating may be conducted between the sub-dummy memory cellsand the bit-lines.

In some embodiments, the semiconductor memory device may be a DRAMdevice.

In some embodiments, the semiconductor memory cell array may beimplemented as one of an open bit-line structure and a folded bit-linestructure.

In some embodiments, the first dummy bit-lines may be dummy bit-linesthat are adjacent to the bit-lines.

In some embodiments, the second dummy bit-line may be dummy bit-linesthat are away farthest from the bit-lines.

According to some example embodiments, a semiconductor memory cell arraymay reduce noise caused by dummy word-lines, dummy bit-lines, and/ordummy memory cells when a semiconductor memory device operates using alow operation voltage. Thus, the semiconductor memory cell array mayprevent operation failures of memory cells due to the noise.

According to some example embodiments, a semiconductor memory device mayachieve high operation reliability because a semiconductor memory cellarray reduce noise caused by dummy word-lines, dummy bit-lines, and/ordummy memory cells when the semiconductor memory device operates using alow operation voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent tothose of ordinary skill in the art by describing in detail exemplaryembodiments with reference to the attached drawings, in which:

FIG. 1 illustrates a circuit diagram of a semiconductor memory cellarray according to some example embodiments.

FIG. 2 illustrates a flow chart of a method of reducing noise caused bydummy word-lines, dummy bit-lines, and/or dummy memory cells in thesemiconductor memory cell of FIG. 1.

FIG. 3 illustrates a block diagram of a semiconductor memory devicehaving the semiconductor memory cell array of FIG. 1.

FIG. 4 illustrates a circuit diagram of a semiconductor memory cellarray according to some example embodiments.

FIG. 5 illustrates a flow chart of a method of reducing noise caused bydummy word-lines, dummy bit-lines, and/or dummy memory cells in thesemiconductor memory cell of FIG. 4.

FIG. 6 illustrates a block diagram of a semiconductor memory devicehaving the semiconductor memory cell array of FIG. 4.

FIG. 7 illustrates a circuit diagram of a semiconductor memory cellarray according to some example embodiments.

DETAILED DESCRIPTION

Korean Patent Application No. 10-2009-0016352, filed on Feb. 26, 2009,in the Korean Intellectual Property Office, and entitled: “SemiconductorMemory Cell Array, and Semiconductor Memory Device Having the Same,” isincorporated by reference herein in its entirety.

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exampleembodiments are shown. The present inventive concept may, however, beembodied in many different forms and should not be construed as limitedto the example embodiments set forth herein. Rather, these exampleembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present inventiveconcept to those skilled in the art. In the drawings, the sizes andrelative sizes of layers and regions may be exaggerated for clarity.Like numerals refer to like elements throughout.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are used to distinguish oneelement from another. Thus, a first element discussed below could betermed a second element without departing from the teachings of thepresent inventive concept. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of thepresent inventive concept. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 illustrates a circuit diagram of a semiconductor memory cellarray according to some example embodiments. Referring FIG. 1, thesemiconductor memory cell array 100 may include a plurality of bit-linesBL1 through BLn, a plurality of word-lines WL1 through WLm, a pluralityof memory cells 120, a plurality of dummy memory cells 140, a pluralityof dummy bit-lines DBL1 through DBL4, and a plurality of dummyword-lines DWL1 and DWL2. The dummy memory cells 140 may include aplurality of sub-dummy memory cells 160 at intersections of thebit-lines BL1 through BLn and the dummy word-lines DWL1 and DWL2.

The memory cells 120 may be at intersections of the bit-lines BL1through BLn and the word-lines WL1 through WLm. One of the memory cells120 may be selected by a column decoder and a row decoder. In detail,data may be written into the memory cells 120 or may be read from thememory cells 120 based on voltages applied into the bit-lines BL1through BLn and the word-lines WL1 through WLm by the column decoder andthe row decoder.

The semiconductor memory cell array 100 may be a dynamic random accessmemory (DRAM) cell array as illustrated in FIG. 1. The semiconductormemory cell array 100 in the DRAM device may be implemented as one of anopen bit-line structure or a folded bit-line structure. Because thesemiconductor memory cell array 100 shown in FIG. 1 is one exampleembodiment, the structure of the semiconductor memory cell array 100 isnot limited thereto.

In the semiconductor memory cell array 100, the bit-lines BL1 throughBLn cross the word-lines WL1 through WLm. The memory cells 120 are atintersections of the bit-lines BL1 through BLn and the word-lines WL1through WLm. Each of the memory cells 120 may include one capacitor andone transistor. Each transistor in the memory cells 120 may include afirst terminal (e.g., a drain terminal) coupled to the bit-lines BL1through BLn, a second terminal (e.g., a source terminal) coupled to eachcapacitor in the memory cells 120, and a third terminal (e.g., a gateterminal) coupled to the word-lines WL1 through WLm.

In the semiconductor memory cell array 100, the dummy memory cells 140are at intersections of the dummy bit-lines DBL1 through DBL4 and thedummy word-lines DWL1 and DWL2, of the dummy bit-lines DBL1 through DBL4and the word-lines WL1 through WLm, and of the bit-lines BL1 through BLnand the dummy word-lines DWL1 and DWL2. That is, the dummy bit-linesDBL1 through DBL4, the dummy word-lines DWL1 and DWL2, and the dummymemory cells 140 are arranged in edge regions of the semiconductormemory cell array 100, while the bit-lines BL1 through BLn, theword-lines WL1 through WLm, and the memory cells 120 are arranged incentral regions of the semiconductor memory cell array 100.

It is relatively difficult to estimate electrical characteristics of thedummy bit-lines DBL1 through DBL4, the dummy word-lines DWL1 and DWL2,and the dummy cells 140 because the dummy bit-lines DBL1 through DBL4,the dummy word-lines DWL1 and DWL2, and the dummy cells 140 are arrangedin edge regions of the semiconductor memory cell array 100. In thesemiconductor memory cell array 100, the dummy bit-lines DBL1 throughDBL4 are in outer regions of the bit-lines BL1 through BLn and parallelto the bit-lines BL1 through BLn. The dummy word-lines DWL1 and DWL2 areformed in outer regions of the word-lines WL1 through WLm while being inparallel to the word-lines WL1 through WLm. The sub-dummy memory cells160 are at intersections of the bit-lines BL1 through BLn and the dummyword-lines DWL1 and DWL2.

According to some embodiments, the dummy bit-lines DBL1 through DBL4 aremaintained in a floating state. According to some embodiments, aturn-off voltage is applied to the dummy word-lines DWL1 and DWL2 tomaintain the dummy memory cells 140 coupled to the dummy word-lines DWL1and DWL2 in a turn-off state.

Further, according to some embodiments, a junction floating 162 isconducted between the sub-dummy memory cells 160 and the bit-lines BL1through BLn. For example, the sub-dummy memory cells 160 among the dummymemory cells 140 may be electrically separated from the bit-lines BL1through BLn.

According to some embodiments, the dummy memory cells 140 coupled to thedummy word-lines DWL1 and DWL2 receive the turn-off voltage. That is,the turn-off voltage is applied into third terminals (e.g., gateterminals) of transistors in the dummy memory cells 140 coupled to thedummy word-lines DWL1 and DWL2. Thus, the dummy memory cells 140 coupledto the dummy word-lines DWL1 and DWL2 are maintained in the turn-offstate. As first terminals (e.g., drain terminals) of transistors in thedummy memory cells 140 are coupled to the dummy bit-lines DBL1 throughDBL4 that are maintained in the floating state, the dummy memory cells140 coupled to the dummy bit-lines DBL1 through DBL4 are maintained inthe floating state.

Further, according to some embodiments, as the junction floating 162 isconducted between the sub-dummy memory cells 160 and the bit-lines BL1through BLn, influence between the sub-dummy memory cells 160 and thebit-lines BL1 through BLn may be reduced or prevented. That is,cross-talk may not occur between the sub-dummy memory cells 160 and thebit-lines BL1 through BLn. As a result, the dummy memory cells 140 inthe semiconductor memory cell array 100 may be prevented from performingunwanted write operations and/or unwanted read operations. In addition,the dummy memory cells 140, the dummy bit-lines DBL1 through DBL4, andthe dummy word-lines DWL1 and DWL2 may not have negative influences uponoperations of the memory cells 120 in the semiconductor memory cellarray 100.

FIG. 2 illustrates a flow chart of a method of reducing noise caused bydummy word-lines, dummy bit-lines, and/or dummy memory cells in thesemiconductor memory cell of FIG. 1 in accordance with embodiments.

Referring to FIG. 2, in the method of reducing noise caused by the dummyword-lines DWL1 and DWL2, the dummy bit-lines DBL1 through DBL4, and/orthe dummy memory cells 140 in the semiconductor memory cell 100, thedummy bit-lines DBL1 through DBL4 may be maintained in the floatingstate (operation S120). The turn-off voltage may be applied into thedummy word-lines DWL1 and DWL2 (operation S140). The junction floating162 may be conducted between the sub-dummy memory cells 160 and thebit-lines BL1 through BLn (operation S160).

The dummy bit-lines DBL1 through DBL4 are maintained in the floatingstate (operation S120). Thus, the dummy memory cells 140 coupled to thedummy bit-lines DBL1 through DBL4 may be maintained in the floatingstate.

In addition, the turn-off voltage is applied into the dummy word-linesDWL1 and DWL2 (operation S140). Thus, the dummy memory cells 140 coupledto the dummy word-lines DWL1 and DWL2 may be maintained in the turn-offstate.

Further, the junction floating 162 is conducted between the sub-dummymemory cells 160 and the bit-lines BL1 through BLn (operation S160).Thus, cross-talk between the sub-dummy memory cells 160 and thebit-lines BL1 through BLn may be reduced or eliminated. For example, thejunction floating 162 may be conducted by electrically separating thesub-dummy memory cells 160 from the bit-lines BL1 through BLn.

The method of FIG. 2 may reduce or prevent operation failures of thememory cells 120 in the semiconductor memory cell array 100 by reducingnoise caused by the dummy word-line DWL1 and DWL2, the dummy bit-linesDBL1 through DBL4, and/or the dummy memory cells 140.

FIG. 3 illustrates a block diagram of a semiconductor memory device 200having the semiconductor memory cell array 100 of FIG. 1 according toembodiments. Referring to FIG. 3, the semiconductor memory device 200may include the semiconductor memory cell array 100, a row decoder 220,a column decoder 240, a sense amplifier 260, and a data input driver280.

As illustrated in FIG. 1, the semiconductor memory cell array 100includes the bit-lines BL1 through BLn, the word-lines WL1 through WLm,the memory cells 120, the dummy memory cells 140, the dummy bit-linesDBL1 through DBL4, and the dummy word-lines DWL1 and DWL2. The dummymemory cells 140 may include the sub-dummy memory cells 160. The dummybit-lines DBL1 through DBL4 are in outer regions of the bit-lines BL1through BLn and parallel to the bit-lines BL1 through BLn. The dummyword-lines DWL1 and DWL2 are in outer regions of the word-lines WL1through WLm and parallel to the word-lines WL1 through WLm. Thesub-dummy memory cells 160 are at intersections of the bit-lines BL1through BLn and the dummy word-lines DWL1 and DWL2. That is, thesub-dummy memory cells 160 are a portion of the dummy memory cells 140.

According to embodiments, the dummy bit-lines DBL1 through DBL4 aremaintained in the floating state and the dummy word-lines DWL1 and DWL2retain the turn-off voltage. The junction floating 162 is conductedbetween the sub-dummy memory cells 160 and the bit-lines BL1 throughBLn. Here, the further descriptions of the semiconductor memory cellarray 100 will be omitted because the semiconductor memory cell array100 is described in detail above.

The row decoder 220 selects one among the word-lines WL1 through WLm tooutput a word-line selection signal RS to the semiconductor memory cellarray 100. The column decoder 240 selects one among the bit-lines BL1through BLn to output a bit-line selection signal CS to thesemiconductor memory cell array 100. Thus, one of the memory cells 140is selected by the word-line selection signal RS from the row decoder220 and the bit-line selection signal CS from the column decoder 240.The sense amplifier 260 reads data BDS from one memory cell 140 selectedby the row decoder 220 and the column decoder 240. The data input driver280 writes data WDS into one memory cell selected by the row decoder 220and the column decoder 240. According to some example embodiments, thesense amplifier 260 may perform the functions of the data input driver280. Here, further description of the row decoder 220, the columndecoder 240, the sense amplifier 260, and the data input driver 280 willbe omitted, as operations of the row decoder 220, the column decoder240, the sense amplifier 260, and the data input driver 280 arewell-known in the art.

As described above, the semiconductor memory device 200 may achieve highoperation reliability because the semiconductor memory cell array 100reduces noise caused by the dummy word-lines DWL1 and DWL2, the dummybit-lines DBL1 through DBL4, and/or the dummy memory cells 140 when thesemiconductor memory device 200 operates using a low operation voltage.

FIG. 4 illustrates a circuit diagram of a semiconductor memory cellarray according to some example embodiments. Referring FIG. 4, thesemiconductor memory cell array 300 may include the plurality ofbit-lines BL1 through BLn, the plurality of word-lines WL1 through WLm,a plurality of memory cells 320, a plurality of dummy memory cells 340,a plurality of first dummy bit-lines 1ST DBL1 and 1ST DBL2, a pluralityof second dummy bit-lines 2ND DBL1 through 2ND DBL4, and the pluralityof dummy word-lines DWL1 and DWL2. The dummy memory cells 340 mayinclude a plurality of sub-dummy memory cells 360 at intersections ofthe bit-lines BL1 through BLn and the dummy word-lines DWL1 and DWL2.

The memory cells 320 may be arranged at intersections of the bit-linesBL1 through BLn and the word-lines WL1 through WLm. One of the memorycells 320 may be selected by a column decoder and a row decoder. Indetail, data may be written into the memory cells 320 or may be readfrom the memory cells 320 based on voltages applied into the bit-linesBL1 through BLn and the word-lines WL1 through WLm by the column decoderand the row decoder, respectively.

The semiconductor memory cell array 300 may be a DRAM cell array asillustrated in FIG. 4. The semiconductor memory cell array 300 in theDRAM device may be implemented as one of an open bit-line structure or afolded bit-line structure. Because the semiconductor memory cell array300 shown in FIG. 4 is one example embodiment, the structure of thesemiconductor memory cell array 300 is not limited thereto.

In the semiconductor memory cell array 300, the bit-lines BL1 throughBLn cross the word-lines WL1 through WLm. The memory cells 320 are atintersections of the bit-lines BL1 through BLn and the word-lines WL1through WLm. The dummy memory cells 340 are intersections of the firstdummy bit-lines 1ST DBL1 and 1ST DBL2 and the dummy word-lines DWL1 andDWL2, of the second dummy bit-lines 2ND DBL1 through 2ND DBL4 and thedummy word-lines DWL1 and DWL2, of the first dummy bit-lines 1ST DBL1and 1ST DBL2 and the word-lines WL1 through WLm, of the second dummybit-lines 2ND DBL1 through 2ND DBL4 and the word-lines WL1 through WLm,and of the bit-lines BL1 through BLn and the dummy word-lines DWL1 andDWL2. That is, the first dummy bit-lines 1ST DBL1 and 1ST DBL2, thesecond dummy bit-lines 2ND DBL1 through 2ND DBL4, the dummy word-linesDWL1 and DWL2, and the dummy memory cells 340 are arranged in edgeregions of the semiconductor memory cell array 300, while the bit-linesBL1 through BLn, the word-lines WL1 through WLm, and the memory cells320 are arranged in central regions of the semiconductor memory cellarray 300.

In the semiconductor memory cell array 300, the first dummy bit-lines1ST DBL1 and 1ST DBL2 are in outer regions of the bit-lines BL1 throughBLn and parallel to the bit-lines BL1 through BLn. The second dummybit-lines 2ND DBL1 through 2ND DBL4 are in outer regions of the firstdummy bit-lines 1ST DBL1 and 1ST DBL2 and parallel to the bit-lines BL1through BLn. The dummy word-lines DWL1 and DWL2 are in outer regions ofthe word-lines WL1 through WLm and parallel to the word-lines WL1through WLm.

In accordance with embodiments, an internal voltage (e.g., a biasvoltage provided through a power line) is applied into the first dummybit-lines 1ST DBL1 and 1ST DBL2. The second dummy bit-lines 2ND DBL1through 2ND DBL4 are maintained in a floating state. A turn-off voltageis applied into the dummy word-lines DWL1 and DWL2 to maintain the dummymemory cells 340 coupled to the dummy word-lines DWL1 and DWL2 in aturn-off state.

Further, the sub-dummy memory cells 360 are at intersections of thebit-lines BL1 through BLn and the dummy word-lines DWL1 and DWL2. Ajunction floating 362 is conducted between the sub-dummy memory cells360 and the bit-lines BL1 through BLn. For example, the sub-dummy memorycells 360 among the dummy memory cells 340 may be electrically separatedfrom the bit-lines BL1 through BLn.

The dummy memory cells 340 coupled to the dummy word-lines DWL1 and DWL2receive the turn-off voltage. That is, the turn-off voltage is appliedinto third terminals (e.g., gate terminals) of transistors in the dummymemory cells 340 coupled to the dummy word-lines DWL1 and DWL2. Thus,the dummy memory cells 340 coupled to the dummy word-lines DWL1 and DWL2are maintained in the turn-off state. As first terminals (e.g., drainterminals) of transistors in the dummy memory cells 340 are coupled tothe second dummy bit-lines 2ND DBL1 through 2ND DBL4 that are maintainedin the floating state, the dummy memory cells 340 coupled to the seconddummy bit-lines 2ND DBL1 through 2ND DBL4 are maintained in the floatingstate. Further, as the junction floating 362 is conducted between thesub-dummy memory cells 360 and the bit-lines BL1 through BLn, influencesbetween the sub-dummy memory cells 360 and the bit-lines BL1 through BLnmay be prevented. That is, cross-talk between the sub-dummy memory cells360 and the bit-lines BL1 through BLn may be reduced or prevented.

As a result, the dummy memory cells 340 in the semiconductor memory cellarray 300 may be prevented from performing unwanted write operationsand/or unwanted read operations. In addition, the dummy memory cells340, the first dummy bit-lines 1ST DBL1 and 1ST DBL2, the second dummybit-lines 2ND DBL1 through 2ND DBL4, and the dummy word-lines DWL1 andDWL2 may not negatively influence operations of the memory cells 320 inthe semiconductor memory cell array 300. As the dummy memory cells 340coupled to the first dummy bit-lines 1ST DBL1 and 1ST DBL2 receive theinternal voltage, the dummy memory cells 340 coupled to the first dummybit-lines 1ST DBL1 and 1ST DBL2 may be used for various purposes. Forexample, the dummy memory cells 340 coupled to the first dummy bit-lines1ST DBL1 and 1ST DBL2 may be used for testing the memory cells 320 inthe semiconductor memory cell array 300.

FIG. 5 illustrates a flow chart of a method of reducing noise caused bydummy word-lines, dummy bit-lines, and/or dummy memory cells in thesemiconductor memory cell 300 of FIG. 4 in accordance with embodiments.

Referring to FIG. 5, in the method of reducing the noise caused by thedummy word-lines DWL1 and DWL2, the first dummy bit-lines 1ST DBL1 and1ST DBL2, the second dummy bit-lines 2ND DBL1 through 2ND DBL4, and/orthe dummy memory cells 340 in the semiconductor memory cell 300, theinternal voltage may be applied into the first dummy bit-lines 1ST DBL1and 1ST DBL2 (operation S220). The second dummy bit-lines 2ND DBL1through 2ND DBL4 may be maintained in the floating state (operationS240). The turn-off voltage may be applied into the dummy word-linesDWL1 and DWL2 (operation S260). The junction floating 362 may beconducted between the sub-dummy memory cells 360 and the bit-lines BL1through BLn (operation S280).

The internal voltage (e.g., the bias voltage provided through the powerline) is applied into the first dummy bit-lines 1ST DBL1 and 1ST DBL2(operation S220). The second dummy bit-lines 2ND DBL1 through 2ND DBL4are maintained in the floating state (operation S240). Thus, the dummymemory cells 340 coupled to the second dummy bit-lines 2ND DBL1 through2ND DBL4 may be maintained in the floating state.

In addition, the turn-off voltage is applied into the dummy word-linesDWL1 and DWL2 (operation S260). Thus, the dummy memory cells 340 coupledto the dummy word-lines DWL1 and DWL2 may be maintained in the turn-offstate.

Further, the junction floating 362 is conducted between the sub-dummymemory cells 360 and the bit-lines BL1 through BLn (operation S280).Thus, cross-talk between the sub-dummy memory cells 360 and thebit-lines BL1 through BLn may be reduced or prevented. For example, thejunction floating 362 may be conducted by electrically separating thesub-dummy memory cells 360 from the bit-lines BL1 through BLn.

As described above, as the dummy memory cells 340 coupled to the firstdummy bit-lines 1ST DBL1 and 1ST DBL2 receive the internal voltage, thedummy memory cells 340 coupled to the first dummy bit-lines 1ST DBL1 and1ST DBL2 may be used for various purposes. For example, the dummy memorycells 340 coupled to the first dummy bit-lines 1ST DBL1 and 1ST DBL2 maybe used for testing the memory cells 320 in the semiconductor memorycell array 300. The method of FIG. 5 may prevent operation failures ofthe memory cells 320 in the semiconductor memory cell array 300 byreducing noise caused by the dummy word-line DWL1 and DWL2, the firstdummy bit-lines 1ST DBL1 and 1ST DBL2, the second dummy bit-lines 2NDDBL1 through 2ND DBL4, and/or the dummy memory cells 340.

FIG. 6 illustrates a block diagram of a semiconductor memory device 500having the semiconductor memory cell array 300 of FIG. 4 according toembodiments. Referring to FIG. 6, the semiconductor memory device 500may include the semiconductor memory cell array 300, a row decoder 520,a column decoder 540, a sense amplifier 560, and a data input driver580.

As illustrated in FIG. 4, the semiconductor memory cell array 300includes the bit-lines BL1 through BLn, the word-lines WL1 through WLm,the memory cells 320, the dummy memory cells 340, the first dummybit-lines 1ST DBL1 and 1ST DBL2, the second dummy bit-lines 2ND DBL1through 2ND DBL4, and the dummy word-lines DWL1 and DWL2. The dummymemory cells 340 include the sub-dummy memory cells 360. The first dummybit-lines 1ST DBL1 and 1ST DBL2 are formed in outer regions of thebit-lines BL1 through BLn. The first dummy bit-lines 1ST DBL1 and 1STDBL2 are coupled to the power line. The first dummy bit-lines 1ST DBL1and 1ST DBL2 are dummy bit-lines that are adjacent to the bit-lines BL1through BLn. The second dummy bit-lines 2ND DBL1 through 2ND DBL4 are inouter regions of the first dummy bit-lines 1ST DBL1 and 1ST DBL2 andparallel to the bit-lines BL1 through BLn. The dummy word-lines DWL1 andDWL2 are in outer regions of the word-lines WL1 through WLm and parallelto the word-lines WL1 through WLm. The sub-dummy memory cells 360 are atintersections of the bit-lines BL1 through BLn and the dummy word-linesDWL1 and DWL2. That is, the sub-dummy memory cells 360 are a portion ofthe dummy memory cells 340.

In accordance with embodiments, the first dummy bit-lines 1ST DBL1 and1ST DBL2 receive the internal voltage through the power line. The seconddummy bit-lines 2ND DBL1 through 2ND DBL4 are maintained in the floatingstate. The dummy word-lines DWL1 and DWL2 retain the turn-off voltage.Here, further description of the semiconductor memory cell array 300will be omitted because the semiconductor memory cell array 300 isdescribed in detail above.

The row decoder 520 selects one among the word-lines WL1 through WLm tooutput a word-line selection signal RS to the semiconductor memory cellarray 300. The column decoder 540 selects one among the bit-lines BL1through BLn to output a bit-line selection signal CS to thesemiconductor memory cell array 300. Thus, one of the memory cells 340is selected by the word-line selection signal RS from the row decoder520 and the bit-line selection signal CS from the column decoder 540.The sense amplifier 560 reads data BDS from one memory cell selected bythe row decoder 520 and the column decoder 540. The data input driver580 writes data WDS into one memory cell selected by the row decoder 520and the column decoder 540. According to some example embodiments, thesense amplifier 560 may perform the functions of the data input driver580. Here, the further descriptions of the row decoder 520, the columndecoder 540, the sense amplifier 560, and the data input driver 580 willbe omitted because the operations of the row decoder 520, the columndecoder 540, the sense amplifier 560, and the data input driver 580 arewell-known in the art.

As described above, the semiconductor memory device 500 may achieve highoperation reliability because the semiconductor memory cell array 300reduces noise caused by the dummy word-lines DWL1 and DWL2, the firstdummy bit-lines 1ST DBL1 and 1ST DBL2, the second dummy bit-lines 2NDDBL1 through 2ND DBL4, and/or the dummy memory cells 340 when thesemiconductor memory device 500 operates using a low operation voltage.

FIG. 7 illustrates a circuit diagram of a semiconductor memory cellarray 400 according to some example embodiments. Referring FIG. 7, thesemiconductor memory cell array 400 may include a plurality of bit-linesBL1 through BLn, a plurality of word-lines WL1 through WLm, a pluralityof memory cells 420, a plurality of dummy memory cells 440, a pluralityof first dummy bit-lines 1ST DBL1 through 1ST DBL4, a plurality ofsecond dummy bit-lines 2ND DBL1 and 2ND DBL2, and a plurality of dummyword-lines DWL1 and DWL2. The dummy memory cells 440 may include aplurality of sub-dummy memory cells 460 at intersections of thebit-lines BL1 through BLn and the dummy word-lines DWL1 and DWL2.

The memory cells 420 may be at intersections of the bit-lines BL1through BLn and the word-lines WL1 through WLm. One of the memory cells420 may be selected by a column decoder and a row decoder. In detail,data may be written into the memory cells 420 or may be read from thememory cells 420 based on voltages applied into the bit-lines BL1through BLn and the word-lines WL1 through WLm by the column decoder andthe row decoder.

The semiconductor memory cell array 400 may be a DRAM cell array asillustrated in FIG. 7. The semiconductor memory cell array 400 in theDRAM device may be implemented as one of an open bit-line structure or afolded bit-line structure. Because the semiconductor memory cell array400 shown in FIG. 7 is one example embodiment, the structure of thesemiconductor memory cell array 400 is not limited thereto.

In the semiconductor memory cell array 400, the bit-lines BL1 throughBLn cross the word-lines WL1 through WLm. The memory cells 420 are atintersections of the bit-lines BL1 through BLn and the word-lines WL1through WLm. The dummy memory cells 440 are at intersections of thefirst dummy bit-lines 1ST DBL1 through 1ST DBL4 and the dummy word-linesDWL1 and DWL2, of the second dummy bit-lines 2ND DBL1 and 2ND DBL2 andthe dummy word-lines DWL1 and DWL2, of the first dummy bit-lines 1STDBL1 through 1ST DBL4 and the word-lines WL1 through WLm, of the seconddummy bit-lines 2ND DBL1 and 2ND DBL2 and the word-lines WL1 throughWLm, and of the bit-lines BL1 through BLn and the dummy word-lines DWL1and DWL2. That is, the first dummy bit-lines 1ST DBL1 through 1ST DBL4,the second dummy bit-lines 2ND DBL1 and 2ND DBL2, the dummy word-linesDWL1 and DWL2, and the dummy cells 440 are arranged in edge regions ofthe semiconductor memory cell array 400 while the bit-lines BL1 throughBLn, the word-lines WL1 through WLm, and the memory cells 420 arearranged in central regions of the semiconductor memory cell array 400.

In the semiconductor memory cell array 400, the first dummy bit-lines1ST DBL1 through 1ST DBL4 are in outer regions of the bit-lines BL1through BLn and parallel to the bit-lines BL1 through BLn. The seconddummy bit-lines 2ND DBL1 and 2ND DBL2 are in outer regions of the firstdummy bit-lines 1ST DBL1 through 1ST DBL4 and parallel to the bit-linesBL1 through BLn. The dummy word-lines DWL1 and DWL2 are in outer regionsof the word-lines WL1 through WLm and parallel to the word-lines WL1through WLm. Further, the sub-dummy memory cells 460 are atintersections of the bit-lines BL1 through BLn and the dummy word-linesDWL1 and DWL2.

In accordance with embodiments, an internal voltage (e.g., a biasvoltage provided through a power line) is applied into the first dummybit-lines 1ST DBL1 through 1ST DBL4. The second dummy bit-lines 2ND DBL1and 2ND DBL2 are maintained in a floating state. A turn-off voltage VOFFis applied into the dummy word-lines DWL1 and DWL2 to maintain the dummymemory cells 440 coupled to the dummy word-lines DWL1 and DWL2 in aturn-off state. A junction floating 462 is conducted between thesub-dummy memory cells 460 and the bit-lines BL1 through BLn. Forexample, the sub-dummy memory cells 460 among the dummy memory cells 440may be electrically separated from the bit-lines BL1 through BLn.

In accordance with embodiments, the dummy memory cells 440 coupled tothe dummy word-lines DWL1 and DWL2 receive the turn-off voltage. Theturn-off voltage VOFF is applied into gate terminals of transistors inthe dummy memory cells 440 coupled to the dummy word-lines DWL1 andDWL2. Thus, the dummy memory cells 440 coupled to the dummy word-linesDWL1 and DWL2 may be maintained in the turn-off state. As firstterminals (e.g., drain terminals) of transistors in the dummy memorycells 440 are coupled to the second dummy bit-lines 2ND DBL1 and 2NDDBL2 that are maintained in the floating state, the dummy memory cells440 coupled to the second dummy bit-lines 2ND DBL1 and 2ND DBL2 aremaintained in the floating state. Further, as the junction floating 462is conducted between the sub-dummy memory cells 460 and the bit-linesBL1 through BLn, influence between the sub-dummy memory cells 460 andthe bit-lines BL1 through BLn may be reduced or prevented. That is,cross-talk between the sub-dummy memory cells 460 and the bit-lines BL1through BLn may be reduced or prevented. As a result, the dummy memorycells 440 in the semiconductor memory cell array 400 may be preventedfrom performing unwanted write operations and/or unwanted readoperations. In addition, the dummy memory cells 440, the first dummybit-lines 1ST DBL1 through 1ST DBL4, the second dummy bit-lines 2ND DBL1and 2ND DBL2, and the dummy word-lines DWL1 and DWL2 may not negativelyinfluence operations of the memory cells 420 in the semiconductor memorycell array 400. As the dummy memory cells 440 coupled to the first dummybit-lines 1ST DBL1 through 1ST DBL4 receive the internal voltage, thedummy memory cells 440 coupled to the first dummy bit-lines 1ST DBL1through 1ST DBL4 may be used for various purposes. For example, thedummy memory cells 440 coupled to the first dummy bit-lines 1ST DBL1through 1ST DBL4 may be used for testing the memory cells 420 in thesemiconductor memory cell array 400.

In a method of reducing noise caused by the dummy word-lines DWL1 andDWL2, the first dummy bit-lines 1ST DBL1 through 1ST DBL4, the seconddummy bit-lines 2ND DBL1 and 2ND DBL2, and/or the dummy memory cells 440in the semiconductor memory cell 400, the internal voltage may beapplied into the first dummy bit-lines 1ST DBL1 through 1ST DBL4. Thesecond dummy bit-lines 2ND DBL1 and 2ND DBL2 may be maintained in thefloating state. The turn-off voltage may be applied into the dummyword-lines DWL1 and DWL2. The junction floating 462 may be conductedbetween the sub-dummy memory cells 460 and the bit-lines BL1 throughBLn.

The internal voltage (e.g., the bias voltage provided through the powerline) is applied into the first dummy bit-lines 1ST DBL1 through 1STDBL4. The second dummy bit-lines 2ND DBL1 and 2ND DBL2 are maintained inthe floating state. Thus, the dummy memory cells 440 coupled to thesecond dummy bit-lines 2ND DBL1 and 2ND DBL2 may be maintained in thefloating state. In addition, the turn-off voltage is applied into thedummy word-lines DWL1 and DWL2. Thus, the dummy memory cells 440 coupledto the dummy word-lines DWL1 and DWL2 may be maintained in the turn-offstate. Further, the junction floating 462 is conducted between thesub-dummy memory cells 460 and the bit-lines BL1 through BLn. Thus,cross-talk between the sub-dummy memory cells 460 and the bit-lines BL1through BLn may be reduced or prevented. For example, the junctionfloating 462 may be conducted by electrically separating the sub-dummymemory cells 460 from the bit-lines BL1 through BLn.

As described above, as the dummy memory cells 440 coupled to the firstdummy bit-lines 1ST DBL1 through 1ST DBL4 receive the internal voltage,the dummy memory cells 440 coupled to the first dummy bit-lines 1ST DBL1through 1ST DBL4 may be used for various purposes. For example, thedummy memory cells 440 coupled to the first dummy bit-lines 1ST DBL1through 1ST DBL4 may be used for testing the memory cells 420 in thesemiconductor memory cell array 400.

In a semiconductor memory device including the semiconductor memory cellarray 400, the semiconductor memory cell array 400 includes thebit-lines BL1 through BLn, the word-lines WL1 through WLm, the memorycells 420, the dummy memory cells 440, the first dummy bit-lines 1STDBL1 through 1ST DBL4, the second dummy bit-lines 2ND DBL1 and 2ND DBL2,and the dummy word-lines DWL1 and DWL2. The dummy memory cells 440include the sub-dummy memory cells 460. The first dummy bit-lines 1STDBL1 through 1ST DBL4 are formed in outer regions of the bit-lines BL1through BLn. The first dummy bit-lines 1ST DBL1 through 1ST DBL4 arecoupled to the power line. The second dummy bit-lines 2ND DBL1 and 2NDDBL2 are dummy bit-lines that are away farthest from the bit-lines BL1through BLn. The sub-dummy memory cells 460 are at intersections of thebit-lines BL1 through BLn and the dummy word-lines DWL1 and DWL2. Thatis, the sub-dummy memory cells 460 are a portion of the dummy memorycells 440. The first dummy bit-lines 1ST DBL1 through 1ST DBL4 receivethe internal voltage through the power line. The second dummy bit-lines2ND DBL1 and 2ND DBL2 are maintained in the floating state. The dummyword lines DWL1 and DWL2 retain the turn-off voltage.

In addition, a row decoder selects one among the word-lines WL1 throughWLm to output a word-line selection signal RS to the semiconductormemory cell array 400. A column decoder selects one among the bit-linesBL1 through BLn to output a bit-line selection signal CS to thesemiconductor memory cell array 400. Thus, one of the memory cells 440is selected by the word-line selection signal RS from the row decoderand the bit-line selection signal CS from the column decoder. A senseamplifier reads data BDS from one memory cell selected by the rowdecoder and the column decoder. A data input driver writes data WDS intoone memory cell selected by the row decoder and the column decoder.According to some example embodiments, the sense amplifier may performthe functions of the data input driver.

As described above, the semiconductor memory device including thesemiconductor memory cell array 400 may achieve high operationreliability because the semiconductor memory cell array 400 reducesnoise caused by the dummy word-lines DWL1 and DWL2, the first dummybit-lines 1ST DBL1 through 1ST DBL4, the second dummy bit-lines 2ND DBL1and 2ND DBL2, and/or the dummy memory cells 440 when the semiconductormemory device operates using a low operation voltage.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcept as defined in the claims. Therefore, it is to be understood thatthe foregoing is illustrative of various example embodiments and is notto be construed as limited to the specific example embodimentsdisclosed, and that modifications to the disclosed example embodiments,as well as other example embodiments, are intended to be included withinthe scope of the appended claims.

1.-20. (canceled)
 21. A semiconductor memory cell array, comprising: aplurality of bit-lines; a plurality of word-lines; a plurality of memorycells at intersections of the bit-lines and the word-lines; a pluralityof dummy memory cells arranged in edge regions of the semiconductormemory cell array; a plurality of dummy word-lines in outer regions ofthe word-lines, the dummy word-lines being configured to receive aturn-off voltage; and a plurality of dummy bit-lines in outer regions ofthe bit-line, the dummy bit-lines being configured to receive aninternal voltage, wherein the dummy memory cells include a plurality ofsub-dummy memory cells at intersections of the bit-lines and the dummyword-lines, the sub-dummy memory cells being not connected to thebit-lines.
 22. The semiconductor memory cell array as claimed in claim21, wherein the dummy memory cells coupled to the dummy word-lines aremaintained in a turn-off state.
 23. The semiconductor memory cell arrayas claimed in claim 21, wherein the sub-dummy memory cells aremaintained in a floating state.
 24. The semiconductor memory cell arrayas claimed in claim 21, wherein the semiconductor memory cell array is adynamic random access memory (DRAM) memory cell array.
 25. Thesemiconductor memory cell array as claimed in claim 24, wherein thesemiconductor memory cell array is implemented as one of an openbit-line structure and a folded bit-line structure.
 26. A semiconductormemory device, comprising: a semiconductor memory cell array; a rowdecoder configured to determine a word-line for selecting a memory cell;a column decoder configured to determine a bit-line for selecting amemory cell; a sense amplifier configured to read data from a memorycell selected by the row decoder and the column decoder; and a datainput driver configured to write data into a memory cell selected by therow decoder and the column decoder, wherein the semiconductor memorycell array includes: a plurality of bit-lines; a plurality ofword-lines; a plurality of memory cells at intersections of thebit-lines and the word-lines; a plurality of dummy memory cells arrangedin edge regions of the semiconductor memory cell array; a plurality ofdummy word-lines in outer regions of the word-lines, the dummyword-lines being configured to receive a turn-off voltage; and aplurality of dummy bit-lines in outer regions of the bit-line, the dummybit-lines being configured to receive an internal voltage, wherein thedummy memory cells include a plurality of sub-dummy memory cells atintersections of the bit-lines and the dummy word-lines, the sub-dummymemory cells being not connected to the bit-lines.
 27. The semiconductormemory device as claimed in claim 26, wherein the dummy memory cellscoupled to the dummy word-lines are maintained in a turn-off state. 28.The semiconductor memory device as claimed in claim 26, wherein thesub-dummy memory cells are maintained in a floating state.
 29. Thesemiconductor memory device as claimed in claim 26, wherein thesemiconductor memory cell array is a dynamic random access memory (DRAM)memory cell array.
 30. The semiconductor memory device as claimed inclaim 29, wherein the semiconductor memory cell array is implemented asone of an open bit-line structure and a folded bit-line structure.